specifications and information are subject to change without notice triquin t semiconductor, inc phone +1 - 503 - 615 - 9000 fax: +1 - 503 - 615 - 8900 e - mail: info - sales@tqs.com web site: www.triquint.com page 1 of 5 august 2009 ag303 - 63 ingap hbt gain block product features dc C 6000 mhz 20.5 db gain @ 900 mhz +14 dbm p1db @ 900 mhz +26 dbm oip3 @ 900 mhz single voltage supply internally matched to 50 robust 1000v esd, class 1c lead - free/green/rohs - compliant sot - 363 package applications mobile infrastruct ure catv / fttx wlan / ism rfid wimax / wibro product description the ag303 - 63 is a general - purpose buffer amplifier that offers high dynamic range in a low - cost surface - mount package. at 900 mhz, the ag303 - 63 typically provides 20.5 db gain, +26 dbm oi p3, and +14 dbm p1db. the device combines dependable performance with consistent quality to maintain mttf values exceeding 1000 years at mounting temperatures of +85 c and is housed in a lead free/green/rohs - compliant sot - 363 industry standard smt package . the ag303 - 63 consists of a darlington - pair amplifier using the high reliability ingap/gaas hbt process technology and only requires dc - blocking capacitors, a bias resistor, and an inductive rf choke for operation. the broadband mmic amplifier can be directly applied to various current and next generation wireless technologies such as gprs, gsm, cdma, and w - cdma. in addition, the ag303 - 63 will work for other various applications within the dc to 6 ghz frequency range such as catv and wimax. functi onal diagram function pin no. input 3 output/bias 6 ground 1, 2, 4, 5 specifications (1) parameter units min typ max operational bandwidth mhz dc 6000 test frequency mhz 900 gain db 20.5 input return loss db 21 output return loss db 24 output p1db dbm +14 output ip3 (2) dbm +25.8 output ip2 dbm +34 noise figure db 3.2 test frequency mhz 1900 gain db 17.3 18.3 19.3 output p1db dbm +12.6 output ip3 (2) dbm +25.3 device voltage v 4.23 device current ma 35 1. te st conditions: . t = 25 oc, supply voltage = +5 v, r bias = 22.1 , 50 system. 2. 3oip measured with two tones at an output power of - 2 dbm/tone separated by 10 mhz. the suppression on the largest im3 product is used to calculate the 3oip using a 2:1 rule. absolute maximum rating parameter rating storage temperature - 55 to +125 c dc voltage +4.5 v rf input power (continuous) +10 dbm thermal resistance, rth for 10 6 hours mttf 350 c/w junction temperature +177 c operation of this device above any o f these parameters may cause permanent damage. typical performance (1) parameter units typical frequency mhz 500 900 1900 2140 s21 db 21.1 20.5 18.3 17.7 s11 db - 20 - 21 - 20 - 20 s22 db - 25 - 24 - 19 - 18 output p1db dbm +14.0 +14.0 +12.6 +12.2 output ip3 dbm +26.1 +25.8 +25.3 +24.9 noise figure db 3.1 3.2 3.4 3.4 ordering information part no. description ag303 - 63g ingap hbt gain block (lead - free/green/rohs - compliant sot - 363 package) ag303 - 63pcb 700 C 2400 mhz fully assembled eval. board standard tape / reel size = 3000 pieces on a 7 reel rf in gnd rf out gnd gnd gnd 1 2 3 4 6 5
specifications and information are subject to change without notice tri quint semiconductor, inc phone +1 - 503 - 615 - 9000 fax: +1 - 503 - 615 - 8900 e - mail: info - sales@tqs.com web site: www.triquint.com page 2 of 5 august 2009 ag303 - 63 ingap hbt gain block typical device rf performance supply bias = +5 v, r bias = 22.1 , i cc = 35 ma frequency mhz 100 500 900 1900 2140 2400 3500 5800 s21 db 21.4 21.1 20.5 18.3 17.7 17.1 15.1 11.4 s11 db - 23 - 20 - 21 - 20 - 20 - 20 - 21 - 20 s22 db - 20 - 25 - 24 - 19 - 18 17 - 16 - 11 output p1db dbm +14.0 +14.0 +14.0 +12.6 +12.2 +12.1 +9.8 output ip3 dbm +26.3 +26.1 +25.8 +25.3 +24.9 +24.2 noise figure db 3.1 3.1 3.2 3.4 3.4 3.5 1. test conditions: t = 25 oc, supply vol tage = +5 v, device voltage = 4.23 v, rbias = 22.1 , icc = 35 ma typical, 50 system. 2. 3oip measured with two tones at an output power of - 2 dbm/tone separated by 10 mhz. the suppression on the largest im3 product is used to calculate the 3oip using a 2:1 rule. 3. data is shown as device performance only. actual implementation for the desired frequency band will be determined by ext ernal components shown in the application circuit. gain vs. frequency 12 14 16 18 20 22 0 1 2 3 4 frequency (ghz) gain (db) -40 c +25 c +85 c return loss -40 -30 -20 -10 0 0 1 2 3 4 5 6 frequency (ghz) s11, s22 (db) s11 s22 i-v curve 0 10 20 30 40 50 60 3.0 3.5 4.0 4.5 device voltage (v) device current (ma) optimal operating point output ip3 vs. frequency 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 frequency (ghz) oip3 (dbm) -40 c +25 c +85 c output ip2 vs. frequency 20 25 30 35 40 0 200 400 600 800 1000 frequency (mhz) oip2 (dbm) -40c +25c +85c noise figure vs. frequency 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 frequency (ghz) nf (db) -40 c +25 c +85 c p1db vs. frequency 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 3.5 4 frequency (ghz) p1db (dbm) -40 c +25 c +85 c output power / gain vs. input power frequency = 900 mhz 10 12 14 16 18 20 -20 -16 -12 -8 -4 0 4 input power (dbm) gain (db) 0 4 8 12 16 20 output power (dbm) output power gain output power / gain vs. input power frequency = 2000 mhz 8 10 12 14 16 18 -20 -16 -12 -8 -4 0 4 input power (dbm) gain (db) -4 0 4 8 12 16 output power (dbm) output power gain
specifications and information are subject to change without notice tri quint semiconductor, inc phone +1 - 503 - 615 - 9000 fax: +1 - 503 - 615 - 8900 e - mail: info - sales@tqs.com web site: www.triquint.com page 3 of 5 august 2009 ag303 - 63 ingap hbt gain block typical device rf performance (contd) supply bias = +6 v, r bias = 51 , i cc = 35 ma typical device rf performance supply bias = +8 v, r bias = 108 , i cc = 35 ma gain vs. frequency 12 14 16 18 20 22 0 1 2 3 4 frequency (ghz) gain (db) -40 c +25 c +85 c output ip3 vs. frequency 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 frequency (ghz) oip3 (dbm) -40 c +25 c +85 c output ip2 vs. frequency 20 25 30 35 40 0 200 400 600 800 1000 frequency (mhz) oip2 (dbm) -40c +25c +85c p1db vs. frequency 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 3.5 4 frequency (ghz) p1db (dbm) -40 c +25 c +85 c noise figure vs. frequency 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 frequency (ghz) nf (db) -40 c +25 c +85 c gain vs. frequency 12 14 16 18 20 22 0 1 2 3 4 frequency (ghz) gain (db) -40 c +25 c +85 c output ip3 vs. frequency 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 frequency (ghz) oip3 (dbm) -40 c +25 c +85 c output ip2 vs. frequency 20 25 30 35 40 0 200 400 600 800 1000 frequency (mhz) oip2 (dbm) -40c +25c +85c p1db vs. frequency 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 3.5 4 frequency (ghz) p1db (dbm) -40 c +25 c +85 c noise figure vs. frequency 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 frequency (ghz) nf (db) -40 c +25 c +85 c
specifications and information are subject to change without notice tri quint semiconductor, inc phone +1 - 503 - 615 - 9000 fax: +1 - 503 - 615 - 8900 e - mail: info - sales@tqs.com web site: www.triquint.com page 4 of 5 august 2009 ag303 - 63 ingap hbt gain block application circuit recommended component values reference frequency (mhz) designator 50 500 900 1900 2200 2500 3500 l1 820 nh 220 nh 68 nh 27 nh 22 nh 18 nh 15 nh c1, c2, c4 .018 f 1000 pf 100 pf 68 pf 68 pf 56 pf 39 pf 1. the proper values for the components are dependent upon the intended frequency of operation. 2. the following values are contained on the evaluation boa rd to achieve optimal broadband performance: ref. desig. value / type size l1 39 nh wirewound inductor 0603 c1, c2 56 pf chip capacitor 0603 c3 0.018 f chip capacitor 0603 c4 do not place r1 22.1 1% tolerance 0805 recommended bias resistor value s the proper value for r1 is dependent upon the supply voltage and allows for bias stability over temperature. wj recommends a minimum supply bias of +5 v. a 1% tolerance resistor is recommended. typical device data s - parameter s (v device = +4.23 v, i cc = 35 ma, t = 25 c, calibrated to device leads) freq (mhz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 50 - 22.98 179.98 21.98 177.39 - 24.44 3.54 - 20.65 - 5.68 250 - 22.69 159.13 21.87 167.91 - 25.02 4.82 - 20.97 - 15.75 500 - 20.16 143.45 21.63 156.07 - 24.85 3.57 - 25.40 - 43.37 750 - 20.26 125.22 21.26 144.84 - 24.83 4.51 - 25.00 - 70.94 1000 - 20.94 105.07 20.77 134.31 - 24.96 3.28 - 23.86 - 91.79 1250 - 20.59 89.33 20.29 124.27 - 24.48 7.57 - 22.22 - 112.20 1 500 - 20.65 73.36 19.71 115.11 - 24.24 5.92 - 20.71 - 125.75 1750 - 20.44 58.55 19.14 106.54 - 23.97 6.93 - 19.65 - 135.37 2000 - 19.79 46.75 18.54 98.41 - 23.30 9.91 - 18.55 - 142.40 2250 - 16.65 30.04 17.95 91.26 - 23.27 8.63 - 16.11 - 127.79 2500 - 17.12 24.85 17.54 85.95 - 23.55 5.06 - 16.52 - 139.55 2750 - 17.94 23.45 17.04 78.85 - 22.50 5.49 - 16.78 - 152.45 3000 - 19.00 24.66 16.52 71.97 - 22.27 7.44 - 17.04 - 171.24 3250 - 20.08 31.09 16.06 65.74 - 21.97 7.62 - 16.83 169.31 3500 - 21.05 44.35 15.56 59.22 - 21.88 5.59 - 16.19 149.95 3750 - 20.77 62.21 15.09 52.71 - 21.42 3.70 - 14.57 132.43 4000 - 19.88 76.48 14.56 46.28 - 21.00 1.61 - 12.93 122.50 4250 - 18.40 88.30 14.12 40.49 - 20.52 - 0.58 - 11.61 114.50 4500 - 17.26 96.65 13.65 34.69 - 20.29 - 4.52 - 10.81 107.97 4750 - 16.54 101.1 5 13.23 28.72 - 20.01 - 4.49 - 10.22 105.55 5000 - 16.75 103.13 12.85 23.29 - 20.11 - 4.65 - 9.92 105.40 5250 - 17.21 108.11 12.49 18.36 - 19.52 - 7.40 - 10.06 102.86 5500 - 18.69 112.12 12.14 13.87 - 19.18 - 10.39 - 10.32 103.16 5750 - 20.02 123.21 11.90 8.93 - 19.00 - 12.21 - 10.98 105.01 6000 - 22.38 131.64 11.68 4.17 - 18.60 - 14.81 - 11.52 103.93 device s - parameters are available for download from the website at: http://www.triquint.com c1 blocking capacitor rf out l1 rf choke c3 0.018 f r1 bias resistor rf in c4 bypass capacitor c2 b locking capacitor vcc icc = 35 ma ag303 - 63 s upply voltage r1 value s ize 5 v 22.1 ohms 0603 6 v 51 ohms 0805 7 v 80 ohms 1206 8 v 108 ohms 1210 9 v 137 ohms 1210 10 v 166 ohms 1210 12 v 223 ohms 2010
specifications and information are subject to change without notice tri quint semiconductor, inc phone +1 - 503 - 615 - 9000 fax: +1 - 503 - 615 - 8900 e - mail: info - sales@tqs.com web site: www.triquint.com page 5 of 5 august 2009 ag303 - 63 ingap hbt gain block mechanical i nformation this package is lead - free/green/rohs - compliant. it is compatible with both lead - free (maximum 260 c reflow temperature) and leaded (maximum 245 c reflow temperature) soldering processes. the plating material on the leads is annealed matte ti n over copper. outline drawing land pattern product marking the component will be marked with a j designator followed by a two - digit numeric lot code on the top surface of the package. tape and reel specifications for this part are located on the website in the application notes section. msl / esd rating esd rating: class 1c value: passes 1000v min. test: human body model (hbm) standard: jedec standard jesd22 - a114 esd rating: class iv value: passes 1000 v min. test: charged device model (cdm) standard: jedec standard jesd22 - c101 msl rating: level 3 at +260 c convection reflow standard: jedec standard j - std - 020 mounting config. notes 1. ground / thermal vias are critical for the proper performance of th is device. vias should use a .35mm (#80 / .0135) diameter drill and have a final plated thru diameter of .25 mm (.010). 2. add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. mounting screws c an be added near the part to fasten the board to a heatsink. ensure that the ground / thermal via region contacts the heatsink. 4. do not put solder mask on the backside of the pc board in the region where the board contacts the heatsink. 5. rf trace wi dth depends upon the pc board material and construction. 6. use 1 oz. copper minimum. 7. all dimensions are in millimeters (inches). angles are in degrees. jx x
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